Gate-tunable resonant tunneling in double bilayer graphene heterostructures.
نویسندگان
چکیده
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.
منابع مشابه
Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in...
متن کاملGate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures
Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplo...
متن کاملTunneling characteristics in chemical vapor deposited grapheneâ•fihexagonal boron nitrideâ•figraphene junctions
Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene – hexagonal boron nitride – graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene – hexagonal boron nitride – graphene devices. Density-of-states features are observed in the tunnel...
متن کاملTunneling characteristics in chemical vapor deposited graphene – hexagonal boron nitride – graphene junctions
Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene – hexagonal boron nitride – graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene – hexagonal boron nitride – graphene devices. Density-of-states features are observed in the tunnel...
متن کاملResonant tunneling and intrinsic bistability in twisted graphene structures
We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable I -V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Nano letters
دوره 15 1 شماره
صفحات -
تاریخ انتشار 2015